Photo of Grein, Christoph

Christoph Grein, PhD




Building & Room:

2338 SES


845 West Taylor St.

Office Phone:

(312) 996-6753



Professor Grein's research concentrates on the electronic and structural properties of narrow gap semiconductors with optoelectronic applications. He has worked extensively at computing nonradiative recombination and generation rates in superlattice-based infrared detectors and lasers and employs band structure engineering to optimize material properties.

Selected Publications

  • “Narrow Gap HgCdTe Absorption Behavior Near the Band Gap – Band Nonparabolicity and the Urbach Tail”, Y. Chang, C.H. Grein, S. Sivananthan, M.E. Flatte, V. Nathan and S. Guha, Appl. Phys. Lett. 89, 062109-62109 (2006)
  • “Single- and Two-Color HgTe/CdTe-Superlattice Based Infrared Detectors”, C.H. Grein, P. Boieriu and M.E. Flatte, Proceedings of SPIE International Symposium on Lasers and Integrated Optoelectronics, Vol. 6127, 61270w-1, 2006.
  • “Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetime in LWIR HgCdTe on Si”, P. Boieriu, C. H. Grein, S. Velicu, J. Garland, C. Fulk, A. Stoltz, L. Bubulac, and J. H. Dinan, Appl. Phys. Lett. 88, 062106 (2006)
  • “Comparison of normal and inverted band structure HgTe/CdTe superlattices for very long wavelength infrared detectors”, C.H. Grein, H. Jung, R. Singh, and M.E. Flatte, J. Electron. Mater 34, 905 (2005)
  • “Estimates of impact ionization coefficients in superlattice-based mid-wavelength infrared avalanche photodiodes”, C.H. Grein, K. Abu El-Rub, M.E. Flatte, and H. Ehrenreich, Mat. Res. Soc. Symp. Proc. 799, 153 (2004)).


BS, Physics (1984), University of New Brunswick

MS, Physics (1986), Princeton University

PhD, Physics (1989), Princeton University