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Photo of Grein, Christoph

Christoph Grein, PhD




Building & Room:

2358 SES


845 West Taylor St.

Office Phone:

(312) 996-6753



Professor Grein's research concentrates on the electronic and structural properties of narrow gap semiconductors with optoelectronic applications. He has worked extensively at computing nonradiative recombination and generation rates in superlattice-based infrared detectors and lasers and employs band structure engineering to optimize material properties.

Selected Publications

  • “Molecular Dynamics Growth Modeling of InAs1-xSbx-Based Type II Superlattice” Anthony J. Ciani, Christoph H. Grein, Barry Irick, Maosheng Miao and Nicholas Kioussis, Optical Engineering 56, 091609 (2017)
  • “Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices”, B.V. Olson, C.H. Grein, J.K. Kim, E.A. Kadlec, J.F. Klem, S.D. Hawkins, and E.A. Shaner, Appl. Phys. Lett 107, 261104 (2015)
  • “Design of Phosphorus-Containing Mid-Wavelength Infrared Type II Superlattices for Infrared Photon Detectors” C.H. Grein, M.E. Flatte, A. Evans, A. Hood, W. Tennant, and V. Nathan, IEEE Journal of Selected Topics in Quantum Electronics 19, 245 (2103)
  • “CdZnTe Radiation Detectors with HgTe/HgCdTe Superlattice Contacts for Leakage Current Reduction”, Y. Chang, C.H. Grein, C.R. Becker, X.J. Wang, Q. Duan, S. Ghosh, P. Dreiske, R. Bommena, J. Zhao, M. Carmody, F. Aqariden, S. Sivananthan, J. Electron. Mater. 40, 1854 (2011)
  • “MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements”, S. Velicu, C. Grein, P. Emelie, A. Itsuno, J. Phillips and P. Wijewarnasuria, Journal of Electronic Materials 39, 873 (2010)


BS, Physics (1984), University of New Brunswick

MS, Physics (1986), Princeton University

PhD, Physics (1989), Princeton University