Dissertation Defense: Jin Hwan Park
CdTe as one of the II-VI semiconductors has become attractive over the last few decades as a result of commercial applications in thin-film solar photovoltaic technology. Although the current record CdTe solar cell efficiency is above 20%, it is still much lower than the maximum single junction theoretical efficiency of approximately 30%. Moreover, the impressive recent efficiency gains are mainly attributed to the short circuit current and fill-factor. Thus, improving open circuit voltage is required in order to achieve the high efficiency CdTe-based solar cells. Here, I will present fabrication and characterization of single crystal CdTe-based II-VI solar cells grown by molecular beam epitaxy (MBE) on Si substrates. I will begin by discussing my results related to material properties of indium tin oxide (ITO), arsenic-doped CdTe, and indium-doped CdTe.